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首页> 外文期刊>Integrated Ferroelectrics: An International Journal >Analysis of Fringe Effect of MEMS Comb Capacitor with Slot Structures
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Analysis of Fringe Effect of MEMS Comb Capacitor with Slot Structures

机译:缝隙结构的MEMS梳状电容器的边缘效应分析

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For a super high precision MEMS sensor with the comb capacitor structure, the fringe effect of capacitors can not be neglected. In this paper, directing at the comb capacitor structure with slot holes, the effects of the non-overlap parts of comb capacitor, the distance between two slot holes in comb electrodes and slot depth aspect ratio on sensing capacitance are simulated by 3D finite element method of ANSOFT Maxwell software. The results show that when the width H and thickness t of sensing electrode plate are fixed, the fringe effect becomes larger for a smaller length L. The fringe effect is very small as non-overlap length is between 100 μm and 180 μm for 500 μm≤L≤1200 μm. The capacitance error caused by the fringe effect is the smallest for the slot distance 35 μm, slot depth 25 μm and slot width 20 μm. The error of sensing displacement caused by the fringe effect of the comb capacitor is 0.61% obtained by MATLAB Simulink.View full textDownload full textKeywordsMEMS, comb capacitor, fringe effect, slotRelated var addthis_config = { ui_cobrand: "Taylor & Francis Online", services_compact: "citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,more", pubid: "ra-4dff56cd6bb1830b" }; Add to shortlist Link Permalink http://dx.doi.org/10.1080/10584587.2011.576920
机译:对于具有梳状电容器结构的超高精度MEMS传感器,不能忽略电容器的边缘效应。本文针对具有槽孔的梳状电容器结构,通过3D有限元方法模拟了梳状电容器非重叠部分,梳状电极中两个槽孔之间的距离以及槽深长宽比对感测电容的影响。 ANSOFT Maxwell软件。结果表明,当固定感测电极板的宽度H和厚度t时,对于较小的长度L,条纹效应变大。由于非重叠长度在500μm和100μm至180μm之间,因此条纹效应非常小。 ≥L≥1200μm。由边缘效应引起的电容误差对于缝隙距离35μm,缝隙深度25μm和缝隙宽度20μm最小。由MATLAB Simulink获得的由梳状电容器的边缘效应引起的感测位移误差为0.61%。查看全文下载全文关键词MEMS,梳状电容器,边缘效应,slotRelated var addthis_config = { “ citeulike,netvibes,twitter,technorati,美味,linkedin,facebook,stumbleupon,digg,google,更多”,pubid:“ ra-4dff56cd6bb1830b”};添加到候选列表链接永久链接http://dx.doi.org/10.1080/10584587.2011.576920

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