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Re-Programmable Antifuse FPGA Utilizing Resistive CeRAM Elements

机译:利用电阻式CeRAM元件的可重新编程反熔丝FPGA

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摘要

A novel architecture utilizing resistive Correlated Electron Random Access Memory (CeRAM) elements to build re-programmable antifuse Field Programmable Gate Array (FPGA) components is introduced. Unlike traditional antifuse switching elements that can become permanently conducting upon application of the programming voltage, CeRAM antifuse elements can be subsequently switched back to an insulating state upon application of a reset voltage allowing the designer the freedom to re-configure the FPGA. Because the CeRAM element is based on a metal-insulator-metal (MIM) stack structure, it can be easily integrated in the upper metal layers of the fabrication process virtually eliminating the need for routing of channels between logic blocks. By utilizing CeRAM structures in the routing resources and as the block memory, it is possible to enhance the density by as much as 6 times, significantly reducing the size of the array while maintaining the use of existing low power logic styles.View full textDownload full textKeywordsAntifuse, CeRAM, FPGA, Resistive MemoryRelated var addthis_config = { ui_cobrand: "Taylor & Francis Online", services_compact: "citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,more", pubid: "ra-4dff56cd6bb1830b" }; Add to shortlist Link Permalink http://dx.doi.org/10.1080/10584587.2011.573729
机译:介绍了一种利用电阻相关电子随机存取存储器(CeRAM)元件构建可重新编程的反熔丝现场可编程门阵列(FPGA)组件的新颖架构。与传统的反熔丝开关元件在施加编程电压后会永久导通不同,CeRAM反熔丝元件可在施加复位电压后随后切换回绝缘状态,从而使设计人员可以自由地重新配置FPGA。由于CeRAM元件基于金属-绝缘体-金属(MIM)堆叠结构,因此可以轻松地集成到制造过程的上部金属层中,从而实际上消除了逻辑块之间通道布线的需要。通过在路由资源和块存储器中利用CeRAM结构,可以将密度提高多达6倍,从而在保持现有低功耗逻辑样式使用的同时显着减小了阵列的大小。查看全文下载全文textKeywordsAntifuse,CeRAM,FPGA,电阻式存储器相关变量var addthis_config = {ui_cobrand:“泰勒和弗朗西斯在线”,servicescompact:“ citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,更多”,pubid: ra-4dff56cd6bb1830b“};添加到候选列表链接永久链接http://dx.doi.org/10.1080/10584587.2011.573729

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