A Built-In-Test Scheme for Evaluating the Parameters of Floating-Gate MOS Transistors

摘要

In this paper, analog multiplexers, biasing circuit, decoders, a 16-bit analog-to-digital (AID) converter, and a 32-bit advanced reduced instruction set computer (RISC) machine are employed to achieve a built-in-test scheme for evaluating the parameters of several "oating-gate Mos transistors (FGTs). The feedback technology is applied so the parameters of FGTs can be evaluated with good accuracy. The proposed scheme does not require any matched components, and thus, it can be applied effectively to evaluate the parameters of multiple FGTs. The sampling time for each FGT is estimated to be 4.8 ms. Examples of analog-circuit applications are addressed to emphasize the necessity of the proposed scheme. Dynamic responses and static characteristics are demonstrated with experimental results.