Material, device, and step independence of the quantized Hall resistance

摘要

We report comprehensive high-precision direct and indirect comparisons of quantized Hall resistances in MOSFET and GaAs heterostructures, for steps 1, 2, 3, 4, 6, and 8. We find no evidence for a step, sample-source, or material dependence of the quantized Hall resistance at the level of 3.5 parts in 10/sup 10/.