A Novel Statistical Timing and Leakage Power Characterization of Partially Depleted Silicon-on-Insulator Gates

摘要

This paper presents a novel statistical characterization for accurate timing and a new probabilistic-based analysis for estimating the leakage power in partially depleted silicon-on-insulator (PD-SOI) circuits in 100-nm BSIMSOI3.2 technology. This paper shows that the accuracy of modeling the leakage current in PD-SOI complementary metal-oxide-semiconductor (CMOS) circuits is improved by considering the interactions between the subthreshold leakage and the gate tunneling leakage, the stacking effect, the history effect, and the fan-out effect, along with a new input-independent method for estimating the leakage power based on a probabilistic approach. The proposed timing and leakage power estimate algorithms are implemented in MATLAB, HSPICE, and C. The proposed methodology is applied to ISCAS85 benchmarks, and the results show that the error is within 5%, compared with random simulation results.