Thermal Oxidation of Thin Cu-Ti Films

摘要

Thin Cu-Ti films are grown on single-crystal silicon substrates by magnetron sputtering, and their oxidation is studied between 420 and 670 K. A technique is proposed for producing Cu-Ti films of controlled composition using a composite target. The phase composition of the films oxidized in oxygen at atmospheric pressure is determined, and their microstructure is studied by scanning electron microscopy. The films are found to contain the intermelallic compounds Cu_3Ti and CuTi_2, which form during both magnetron sputtering and subsequent oxidation.