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首页> 外文期刊>Inorganic materials >Effect of IR Irradiation on the Oxidation of Thin Cu-Ti Films on Si Substrates at Reduced Oxygen Pressure
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Effect of IR Irradiation on the Oxidation of Thin Cu-Ti Films on Si Substrates at Reduced Oxygen Pressure

机译:降低氧压下红外辐射对Si衬底上Cu-Ti薄膜氧化的影响

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摘要

The effect of IR irradiation on the low-pressure oxidation of thin Cu-Ti films grown on Si by magnetron sputtering is studied, and the phase composition of the films is determined before and after oxidation. The solid-state reactions involved are discussed, and a mechanism is proposed which accounts for the observed decrease in oxidation rate under IR irradiation.
机译:研究了红外辐射对通过磁控溅射法在Si上生长的Cu-Ti薄膜进行低压氧化的影响,并确定了氧化前后的相组成。讨论了所涉及的固态反应,并提出了一种机制,该机制解释了在红外辐射下观察到的氧化速率下降。

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