Emission from Rare-Earth Ions in GaN Wurtzite Crystals

摘要

Intense studies of a wide-gap direct-zone semiconductor represented by GaN wurtzite crystals doped with rare-earth ions, namely, Eu, Er, Sm, and Tm, suggest the development of an alternative (compared to that with the use of InGaN layers) technology of fabrication of light-emitting diodes of white color. The opportunities of increasing the intensity of emission of intracenter 4f transitions are demonstrated for rare-earth ions in GaN wurtzite crystals by the optimization of doping technology, concentration of rare-earth ions, and use of an additionally introduced impurity. The form of electroluminescence spectra of the GaN(RE)-based structures is similar to the form of photoluminescence spectra.