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Domain formation in heavily doped LiNbO3:Mg crystals exposed to an electron beam

机译:暴露于电子束的重掺杂LiNbO3:Mg晶体中的畴形成

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摘要

This paper presents a detailed study of domain structures produced by an electron beam on the Z-cut surface of LiNbO3:Mg crystals. The doping level and procedure have been shown to influence the shape and number of domains formed in the electron charge deposition zone on the crystal surface. Controlled formation of domains and domain structures through electron beam writing has only been achieved in samples with subthreshold magnesium concentration and in LiNbO3:Mg,Fe samples. The experimental results obtained are discussed in terms of differences in the defect structure and mechanisms of electronic conduction of the samples.
机译:本文详细介绍了由电子束在LiNbO3:Mg晶体的Z切面上产生的畴结构。已经显示出掺杂水平和程序会影响晶体表面上电子电荷沉积区中形成的畴的形状和数量。仅在亚阈值镁浓度的样品和LiNbO3:Mg,Fe样品中才实现了通过电子束写入控制形成的畴和畴结构。根据样品的缺陷结构和电子传导机理的差异讨论了获得的实验结果。

著录项

  • 来源
    《Inorganic materials》 |2015年第6期|607-612|共6页
  • 作者单位

    Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Oblast, Russia;

    Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Oblast, Russia;

    Russian Acad Sci, Kola Sci Ctr, Tananaev Inst Chem & Technol Rare Elements & Mine, Apatity 184209, Murmansk Oblast, Russia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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