Process for the production of doped silicon single crystals by electron-beam float zoning and inlet valve FOR realization thereof

摘要

The invention relates to the field of metallurgy and can be used to obtain doped silicon single crystals. The process consists in melting of zone of the initial rod by an adjusting electron beam and supplying of the doping agent into the melting vacuumized chamber. Supplying of the doping agent is carried out by the inlet valve, comprising a cylindrical body with joining pipes for connection the input and output of gas, bellows unit with the rod, needle, which is made in the form of a cone entering the lower saddle of the joining pipe and controls the consumption of the doping agent. The angle of taper of the needle should be no more than 4° and at least 2,5(. The invention provides a high thermal efficiency (efficiency of the process is 90 %), of the producing of a flat crystallization front, as well as management and maintenance of a given height of the molten zone.