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Superconductivity below 20 K in heavily electron-doped surface layer of FeSe bulk crystal

机译:FeSe块状晶体重电子掺杂表面层中的超导率低于20K

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摘要

A superconducting transition temperature (Tc) as high as 100 K was recently discovered in one monolayer FeSe grown on SrTiO3. The discovery ignited efforts to identify the mechanism for the markedly enhanced Tc from its bulk value of 8 K. There are two main views about the origin of the Tc enhancement: interfacial effects and/or excess electrons with strong electron correlation. Here, we report the observation of superconductivity below 20 K in surface electron-doped bulk FeSe. The doped surface layer possesses all the key spectroscopic aspects of the monolayer FeSe on SrTiO3. Without interfacial effects, the surface layer state has a moderate Tc of 20 K with a smaller gap opening of 4.2 meV. Our results show that excess electrons with strong correlation cannot induce the maximum Tc, which in turn reveals the need for interfacial effects to achieve the highest Tc in one monolayer FeSe on SrTiO3.
机译:最近在SrTiO3上生长的单层FeSe中发现了高达100 K的超导转变温度(Tc)。这一发现激发了人们从8 K的体积值中识别出Tc显着增强的机理的努力,关于Tc增强的起源有两种主要观点:界面效应和/或具有强电子相关性的过量电子。在这里,我们报告了在表面电子掺杂的块状FeSe中20 K以下的超导现象。掺杂的表面层具有SrTiO3上单层FeSe的所有关键光谱方面。没有界面效应,表面层状态的Tc为20 K,间隙开口较小,为4.2 meV。我们的结果表明,具有强相关性的过量电子不能诱导最大Tc,这反过来表明需要界面效应才能在SrTiO3上的单层FeSe中获得最高Tc。

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