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Dislocation Sinks Efficiency for Self-Point Defects in Iron and Vanadium Crystals

机译:位错沉效率的铁和钒晶体中的自点缺陷。

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摘要

The effect of the dislocations stress fields on their sink efficiency for self-point defects (interstitial atoms and vacancies) is studied in the temperature range of 293-1000 K and at the dislocation density values of 1 × 10~(12)-3 × 10~(14) m~(-2) in body-centered cubic (BCC) iron and vanadium crystals. Straight screw and edge dislocations in 〈111〉{110}, 〈111〉{112}, 〈100〉{100}, and 〈100〉{ 110} slip systems are considered. Defect diffusion is simulated via the object kinetic Monte Carlo method. The energies of the interaction of defects with dislocations are calculated within the anisotropic linear theory of elasticity. The dislocation sink efficiency is analytically represented as a function of temperature and dislocation density.
机译:研究了位错应力场在293-1000 K温度范围内以及位错密度值为1×10〜(12)-3×时对自点缺陷(间隙原子和空位)的吸收效率的影响。在体心立方(BCC)铁和钒晶体中为10〜(14)m〜(-2)。考虑在<111> {110},<111> {112},<100> {100}和<100> {110}滑移系统中的直螺钉和边缘错位。缺陷扩散是通过对象动力学蒙特卡洛方法进行模拟的。缺陷与位错相互作用的能量是根据各向异性线性弹性理论计算的。位错阱效率可解析地表示为温度和位错密度的函数。

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