Excellence award for InP but SiC and GaN come crowding in

Gail Purvis

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Excellence award for InP but SiC and GaN come crowding in

机译：InP卓越奖，但SiC和GaN挤入

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Vitesse was recently presented with Frost & Sullivan's 2005 'Technology Innovation of the Year Award', for its innovative $6m VIP-2 InP HBT technology. But more recent DARPA awards focus on GaN and SiC. With contracts worth between $125.8m-$163.2m, GaN devices, with SiC substrates, can hardly fail to be seen as InP's successors.

机译：Vitesse因其创新的600万美元VIP-2 InP HBT技术而获得Frost＆Sullivan授予的2005年“年度技术创新奖”。但是最近的DARPA奖项主要集中在GaN和SiC上。凭借价值在1.258亿美元至1.632亿美元之间的合同，带有SiC衬底的GaN器件几乎不能被视为InP的继任者。

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《III-Vs Review》 |2005年第7期|p.44-47|共4页
作者
Gail Purvis;
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中图分类无线电电子学、电信技术;
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机译：InP卓越奖，但SiC和GaN挤入

Excellence award for InP but SiC and GaN come crowding in

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