Performance of 4H-SiC and Wz-GaN Over InP IMPATT Devices at 1.0 THz Frequency

摘要

We have studied the performance of impact avalanche transit time (IMPATT) devices based on wide band gap semiconductor materials like 4H-SiC and Wz-GaN over low band gap InP at 1.0 tera-hertz (THz) frequencies. A drift-diffusion model is used to design double drift region (DDR) IMPATTs based on these materials. From the results, it is found that the RF power for 4H-SiC gives 26 times more than InP and 4 times than Wz-GaN based IMPATT diode. Similarly, the Wz-GaN has more noise of about 32.6 dB as compared to 4H-SiC (29.5 dB) and InP (31.5 dB). Generation of significant RF power for 4H-SiC with moderate noise is better as compared to the InP and Wz-GaN based devices. The excellent results indicate that 4H-SiC based IMPATT diodes are the future terahertz sources.