Design, Performance and Device/Circuit Limitations of N-Way Symmetrical IMPATT Diode Power Combining Arrays

摘要

Circuit design and stability criteria are developed for a new class of IMPATT diode power combiners. These combiners make use of radial-symmetric circuits and provide an optimal integration of device and circuit properties to perform the power adding function. Both lossless N-way combiners and resistively stabilized N-way combiners are considered. Examples of this combining technique are given at frequencies of 10 GHz and 90 GHz which make use of realistic IMPATT diode parameters. The 30-W, ten-diode lossless X-band combiner indicates a 1-dB locking bandwidth of 300 MHz and 10 dB gain, while the millimeter-wave combiner provides a 1-dB bandwidth of 9 GHz at 87 GHz and 10 dB locking gain. A 100-W, resistively stabilized 10 GHz, ten-diode combiner shows a 150 MHz locking bandwidth, also at 10 dB locking gain. (Author)