Statistical Threshold Voltage Fluctuation Analysis by Monte Carlo Ion Implantation Method

摘要

A new analysis method for random dopant induced threthold voltage fluctuations by using Monte Carlo ion implantation were presented. The method was applied to investigate V_t fluctuations due to statistical variation of pocket dopant profile in 0.1μm MOSFET's by 3D process-device simulation system. This method is very useful to analyze a statistical fluctuation in sub-100nm MOSFET's efficiently.