An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration

摘要

For tracking electromigration induced evolution of voids a diffuse interface model is applied. We assume an interconnect as two-dimensional electrically conducting via which contains initially a circular void. The diffuse interface governing equation was solved applying a finite element scheme with a robust local grid adaptation algorithm. Simulations were carried out for voids exposed to high current. An influence of the void dynamics on the resistance of interconnect is investigated. In the case of the interconnect via it was shown that a migrating void exactly follows the current flow, retaining its stability, but due to change of shape and position causes significant fluctuations in interconnect resistance.