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Low-voltage And Low-noise Cmos Analog Circuits Using Scaled Devices

机译:使用缩放器件的低压低噪声Cmos模拟电路

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Recently low-voltage and low-noise analog circuits with sub 100-nm CMOS devices are strongly demanded for implementing mobile digital multimedia and wireless systems. Reduction of supply voltage makes it difficult to attain a signal voltage swing, and device deviation causes large DC offset voltage and 1 /f noise. This paper describes noise reduction technique for CMOS analog and RF circuits operated at a low supply voltage below 1 V. First, autozeroing and chopper stabilization techniques without floating analog switches are introduced. The amplifier test chip with a 0.18-μm CMOS was measured at a 0.6-V supply, and achieved 89-nV/VHz input referred noise (at 100Hz). Secondly, in RF frequency range, to improve a phase noise of voltage controlled oscillator (VCO), two 1/f-noise reduction techniques are described. The ring VCO test chip achieves 1-GHz oscillation, -68 dBc/Hz at 100-kHz offset, 710-μW power dissipation at 1-V power supply.
机译:最近,对于实现移动数字多媒体和无线系统,强烈要求具有100纳米以下CMOS器件的低压低噪声模拟电路。电源电压的降低使得难以获得信号电压摆幅,并且器件偏差会导致较大的DC偏移电压和1 / f噪声。本文介绍了在低于1 V的低电源电压下工作的CMOS模拟和RF电路的降噪技术。首先,介绍了不带浮动模拟开关的自动调零和斩波稳定技术。在0.6V电源下测量了具有0.18μmCMOS的放大器测试芯片,并获得了89nV / VHz的输入参考噪声(在100Hz时)。其次,在RF频率范围内,为了改善压控振荡器(VCO)的相位噪声,描述了两种1 / f降噪技术。环形VCO测试芯片可实现1-GHz振荡,100kHz偏移时为-68 dBc / Hz,1-V电源时的功耗为710μW。

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