Design of a K-Band Power Amplifier Using On-Wafer-Tuning Load- Pull Method

摘要

In high-frequency operation, it is difficult to obtain a large tuning range in load-pull measurement due to losses in the tun- ing network and RF-probes, In this paper, a low-loss on-wafer-tuning load-pull method is proposed. The output matching network consists of two CPWs connected to a FET output terminal. The impedance of the network can be controlled by changing the effective length of the CPWs by replacing RF-probes and removing air-bridges. To confirm the validity of this load-pull method, a K-band high-efficiency MMIC power amplifier has been deigned using the method and fabricated.