文中介绍了X波段GaN功率放大器的设计.通过负载牵引测试的方式找到了GaN器件SGK7785-30A的最佳工作阻抗,并基于该阻抗值完成了电路的匹配设计.文中首先给出了X波段GaN功放的整体设计方案,其次详细介绍了负载牵引测试系统和测量过程中的关键技术,最后介绍了单级电路的设计要点.功放在8.0 GHz连续波情况下,输出30.77 W功率,功率附加效率超过30%,7.9~8.1 GHz范围内增益平坦度小于0.5 dB.%This paper introduces the design of X-band GaN power amplifier. By load-pull measurements of GaN devices SGK7785-30A,we found the optimum impedance, based on which we implemented the matching design of the circuit. This paper first shows the overall design of X-band GaN power amplifier , secondly introduces the load-pull measurement system and key technology in the process of measurement in detail, finally introduced the key design points of single-stage circuit.The PA achieves 30.77W output power with the PAE over 30%, while its gain flatness less than 0.5 dB from 7.9~8.1 GHz.
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