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机译:氢化作用对MONOS型记忆程序/擦除周期质量改善的影响的原子学研究
The authors are with the Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba-shi, 305-8571 Japan.;
The authors are with the Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba-shi, 305-8571 Japan.;
The authors are with the Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba-shi, 305-8571 Japan.;
The author is with the Graduate School of Engineering Science, Osaka University, Toyonaka-shi, 560-8531 Japan.;
The authors are with the Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba-shi, 305-8571 Japan.,The author is with Center of Computational Science, University of Tsukuba, Tsukuba-shi, 305-8571 Japan;
non-volatile memory, MONOS, SiN, first principles calcula-tion, charge trap memory;
机译:氢对MONOS型存储器编程/擦除循环的影响的理论研究
机译:氢对MONOS型存储器编程/擦除循环的影响的理论研究
机译:氢对MONOS型存储器编程/擦除周期的影响的理论研究
机译:具有较高程序/擦除周期耐久性的MONOS类型内存的原子性准则
机译:闪存可擦可编程只读存储设备中的热载流子效应。
机译:国家质量改善计划对中国重症监护室的影响:586所医院的队列前对照研究
机译:3-D NAND闪存中程序/擦除循环期间横向电荷扩散劣化的原子研究
机译:电子束可编程128K位晶圆级EpROm(可擦除可编程只读存储器)。