Charge injection using gate-induced-drain-leakage current forcharacterization of plasma edge damage in CMOS devices

摘要

In this paper, we describe the application ofngate-induced-drain-leakage (GIDL) current for the characterization ofngate edge damage which occurs during the plasma etch processes. We shownfrom experimental and simulation results that when the channel is biasednin accumulation and with the drain-substrate junction reverse biased,ncharge injection is localized in the gate-drain overlap region. Undernthis localized charge injection (LCI) mode of operation, the gatenvoltage is a function of edge oxide thickness which in turn can benrelated to the plasma damage received during the poly-etch andnsubsequent spacer oxide formation. The detailed mechanism of localizedncharge injection for a study of plasma edge damage is explained alongnwith the experimental demonstration of this technique using submicronnMOSFET's