Characterization of systematic MOSFET current factor mismatchcaused by metal CMP dummy structures

摘要

This paper presents a study on techniques for characterization ofnmetal-oxide-semiconductor field-effect transistor (MOSFET)ntransconductance mismatch, using matched pairs with intentional 1%ndimensional offsets. The relevance of this kind of work is demonstratednby the introduction of a new mismatch phenomenon that can be attributednto mechanical strain, associated with metal dummy structures that arenrequired for backend chemical mechanical polishing (CMP) processingnsteps