Reduction of off-state leakage current in In_(0.7)Ga _(0.3)As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization

摘要

In_(0.7)Ga_(0.3)As channel n-MOSFETs (metal-oxide- semiconductor field-effect transistors) with Si-doped S/D and self-aligned Ni-InGaAs contact were demonstrated for the first time. The salicide-like metallization process employed a direct reaction between Ni and Si-doped InGaAs, followed by the removal of the unreacted Ni. As compared with n-MOSFETs with metallic Ni-InGaAs S/D (i.e. no Si doping in S/D), n-MOSFETs with Ni-InGaAs contact formed on Si-doped S/D show significantly improved OFF-state current IOFF in the linear and saturation regions.