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Real-time predictive control of photoresist film thicknessuniformity

机译:光刻胶膜厚均匀性的实时预测控制

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With the trends toward larger wafer size and the linewidth goingnbelow 100 nm, one of the challenges is to control the resist thicknessnand uniformity to a tight tolerance in order to minimize the thin-filmninterference effect on the critical dimension. In this paper, we proposena new approach to improve resist thickness control and uniformitynthrough the softbake process. Using an array of thickness sensors, anmultizone bakeplate, and advanced control strategy, the temperaturendistribution of the bakeplate is manipulated in real time to reducenresist thickness nonuniformity. The bake temperature is also constrainednto prevent the decomposition of a photoactive compound in the resist. Wenhave experimentally obtained a repeatable improvement in resistnthickness uniformity from wafer-to-wafer and across individual wafers.nThickness nonuniformity of less than 10 Å has been obtained. Onnaverage, there is 10 × improvement in the thickness uniformity asncompared to conventional softbake process
机译:随着晶圆尺寸越来越大且线宽趋于100 nm以下的趋势,挑战之一是将抗蚀剂的厚度和均匀性控制在严格的公差范围内,以最大程度地减小薄膜对关键尺寸的干扰。在本文中,我们提出了一种通过软烘烤工艺来改善抗蚀剂厚度控制和均匀性的新方法。使用一系列厚度传感器,多区域烤盘和先进的控制策略,可以实时控制烤盘的温度分布,以减少电阻器的厚度不均匀性。烘烤温度也受到限制,以防止光刻胶中光敏化合物的分解。 Wenha在实验上获得了晶片之间以及单个晶片之间的电阻厚度均匀性的可重复改善.n厚度不均匀度小于10Å。平均而言,与传统的软烘烤工艺相比,厚度均匀性提高了10倍

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