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首页> 外文期刊>IEEE Transactions on Semiconductor Manufacturing >Last Metal Copper Metallization for Power Devices
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Last Metal Copper Metallization for Power Devices

机译:电力设备的最后一种金属铜金属化

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High current-carrying capacity and low resistivity are key parameters for power devices. In this paper a copper based terminal metallurgy scheme for wire- and wedge-bonding is described, which improves these properties. The method of choice for depositing thick copper wires is pattern plating. However the plating process has to be optimized in order to get a homogeneous thickness distribution. An electroless coating of NiP, Pd and Au on top of the Cu layers is used as bond interface. This process provides high reliable gold-wire and aluminum-wedge bonds.
机译:高载流能力和低电阻率是功率器件的关键参数。在本文中,描述了一种用于引线键合和楔形键合的铜基终端冶金方案,该方案可改善这些性能。沉积粗铜线的选择方法是图案电镀。但是,必须优化电镀工艺以获得均匀的厚度分布。在铜层顶部的NiP,Pd和Au的化学镀层用作键合界面。此过程可提供高度可靠的金线和铝楔键。

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