A Spatio-Temporal Defect Process Model for Competing Progressive Breakdown Modes of Ultra-Thin Gate Oxides

摘要

Continuous downscaling of metal-oxide-semiconductor field effect transistor (MOSFET) devices has led to reliability concerns, and requires a fundamental understanding of their failure mechanisms. In particular, gate oxide breakdown is a key mechanism limiting the lifetimes of MOSFET devices. By combining stochastic defect generation processes, and the time required to construct percolation paths by the defects, this paper proposes a spatio-temporal percolation model for progressive breakdowns of ultra-thin gate oxide in a convolution form. The model simultaneously considers general patterns of defect generation and defect occurrence times presented in competing modes. The proposed model is consistent with the general statistical features of gate oxide breakdowns observed in existing experimental works. This spatio-temporal model provides more precise results on the failure-time distribution of MOSFET devices, especially at lower quantiles.