Clustered Insulated Gate Bipolar Transistor in the Super Junction Concept: The SJ-TCIGBT

摘要

We report results of comprehensive 2-D simulation evaluation of the first MOS-controlled thyristor structure employing the super junction concept on a 1.2-kV field stop structure. In comparison to a standard device, simultaneous reduction in V $_{rm ce}$(sat) and E $_{rm off}$ can be achieved in a super junction trench clustered insulated gate bipolar transistor (SJ-TCIGBT). The simulation results show that up to 80% reduction in E$_{rm off}$ is possible. Unlike the super junction insulated gate bipolar transistors, there is no significant increase in the saturation current with the anode voltage or the depth of the pillars. SJ-TCIGBT is a highly promising next generation device concept with record-breaking V $_{rm ce}$(sat)-E$_{rm off}$ tradeoff enhancement to improve converter efficiency.