Accurate Extraction Method of Reverse Recovery Time and Stored Charge for Ultrafast Diodes

摘要

This letter presents a novel extraction method to accurately determine a reverse recovery time and a stored charge for ultrafast diodes. To obtain this, a test circuit to measure those parameters was accurately modeled by considering an inductance and a parasitic resistance, which are inherently embedded in the test circuit and lead to oscillation. The experimental results showed that the corrected reverse recovery time was reduced by 1.2 ns for an Si fast recovery diode, while by 6.8 ns for an SiC Schottky barrier diode, compared to their measured reverse recovery time.