Design and Performances of 4H-SiC Bipolar Mode Field Effect Transistor (BMFETs)

摘要

An original design of 4H polytype of silicon carbide (4H-SiC) bipolar-mode field-effect transistors (BMFETs), which combines the on-state operation of silicon version with the off-state behavior of SiC-VJFETs (vertical junction field-effect transistor), is analyzed by numerical simulations. Using the physical parameters extracted from the previous experimental analysis, this paper shows the feasibility of 4H-SiC BMFETs to manage drain current densities as high as 500 A/cm$^{2}$ with a current gain of 50 and to sustain blocking voltage of 2.1 kV. Comparisons with the existing 4H-SiC power transistors, like bipolar junction transistors (BJTs), VJFETs, and double-diffusive metal–oxide–semiconductor FETs, show that, besides a thermal stability in the examined range 300–523 K, BMFET exhibits the low on-resistance of BJTs and can operate at the high frequencies of power FETs.