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HIGH-PERFORMANCE REVERSE-CONDUCTION FIELD-STOP (RCFS) INSULATED GATE BIPOLAR TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
HIGH-PERFORMANCE REVERSE-CONDUCTION FIELD-STOP (RCFS) INSULATED GATE BIPOLAR TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
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机译:高性能反向传导场截止绝缘栅双极晶体管及其制造方法
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摘要
A high-performance reverse-conduction field-stop (RCFS) insulated gate bipolar transistor (IGBT) includes a first conductive type substrate, a plurality of trenches defined on a bottom face of the substrate, a plurality of first conductive type doping regions formed on bottom face of the trenches, a second conductive type doping region formed on bottom face of the substrate, and a first conductive type field stop doping region formed in the substrate and separated from the bottom face of the substrate by a field stop depth, where the field stop depth is larger than a depth of the trench. Due to a separation between the first conductive type doping regions and the second conductive type doping region, Zener diode can be prevented from forming on bottom side of the substrate and the performance of IGBT can be accordingly enhanced.
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