机译:GaN基HEMT的击穿表征方法分析
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, China;
Breakdown characterization method; GaN-based high-electron-mobility transistors (HEMTs); breakdown characterization method; breakdown curves; breakdown mechanisms; off-state leakage currents;
机译:具有Ti / Al / Ni / Ti欧姆触点硅硅的高击穿电压GaN的垫圈
机译:正偏置GaN基功率HEMT中p-GaN栅极击穿的研究
机译:GaN基MIS-HEMT器件的击穿研究
机译:高功率电子设备的建模与鉴定:闪光沸腾和GAN HEMT可靠性造型激光二极管的系统分析
机译:激光诱导击穿光谱法在环境文化遗产和空间应用中的元素分析:方法和结果综述
机译:高直流电压应力下基于GaN的HEMT中1 / f噪声的表征(邀请论文)