首页> 外文OA文献 >Characterization of 1/f noise in GaN-based HEMTs under high dc voltage stress (Invited Paper)

【2h】

Characterization of 1/f noise in GaN-based HEMTs under high dc voltage stress (Invited Paper)

机译：高直流电压应力下基于GaN的HEMT中1 / f噪声的表征（邀请论文）

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

Conference on Noise in Devices and Circuits III, Austin, U.S.A., May 2005

机译：于2005年5月在美国奥斯汀举行的设备与电路噪声会议III

著录项

作者
Jha SK; Zhu CF; Jelenkovic EV; Tong KY; Surya C; Schweizer H; Pilkhuhn M;
展开▼
作者单位

展开▼
年度 2005
总页数
原文格式 PDF
正文语种 eng
中图分类

相似文献

外文文献
中文文献
专利

1. Analysis of drain current transient stability of AlGaN/GaN HEMT stressed under HTOL & HTRB, by random telegraph noise and low frequency noise characterizations [J] . Tartarin J. G., Lazar O., Rumeau A., Microelectronics & Reliability . 2020,第Nova期

机译：随机电报噪声和低频噪声特性，AlGaN / GaN HEMT的漏极电流瞬态稳定性的漏极电流瞬态稳定性分析
2. DC and 1/f noise characterization of cryogenically cooled pseudomorphic HEMT's [J] . G. Ferrante, F. Principato, A. Caddemi, Journal de Physique, IV: Proceedings of International Conference . 2002,第3期

机译：低温冷却的伪晶HEMT的DC和1 / f噪声表征
3. Characterization of Deep and Shallow Traps in GaN HEMT Using Multi-Frequency C-V Measurement and Pulse-Mode Voltage Stress [J] . Yang Wen, Yuan Jiann-Shiun, Krishnan Balakrishnan, Nature reviews Cancer . 2019,第2期

机译：使用多频C-V测量和脉冲模式电压应力的GaN HEMT深层浅陷阱的表征
4. Characterization of 1/f noise in GaN-based HEMTs under high dc voltage stress [C] . S.K. Jha, C.F. Zhu, E. Jelenkovic, Noise in Devices and Circuits III . 2005

机译：高直流电压应力下基于GaN的HEMT中1 / f噪声的表征
5. Technologies to Improve GaN-Based LLC Resonant Converter for Wide Input Voltage, High Output Current AC-DC and DC-DC Applications [D] . Sheng, Bo. 2020

机译：改进GaN的LLC谐振转换器的技术，用于宽输入电压，高输出电流AC-DC和DC-DC应用
6. Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices [O] . Huolin Huang, Feiyu Li, Zhonghao Sun, 2018

机译：宽带隙GaN基HEMT功率器件中取决于高温操作的阈值电压稳定性的模型开发
7. Low-frequency noise characterization of hot-electron degradation in GaN-based HEMTs [O] . Jha S, Gao J, Zhu CF, 2005

机译：GaN基HEMT中热电子降解的低频噪声表征

Characterization of 1/f noise in GaN-based HEMTs under high dc voltage stress (Invited Paper)

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅