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A Fully Integrated FVF-Based Low-Dropout Regulator With Wide Load Capacitance and Current Ranges

机译:完全集成的基于FVF的低压降稳压器,具有宽的负载电容和电流范围

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The flipped-voltage-follower-based low-dropout regulator (LDO) has drawn attention for its fast response and reduced complexity, while super source follower can be combined to push the pole at the gate of the pass device to high frequency. But the maximum load current and minimum load capacitance of this topology are limited, especially when the poles and zero from the SSF are omitted in previous designs. This paper proposes a solution to extend the ranges of the load current and load capacitance, by implementing a small feed-forward capacitor (C-F) and a damping factor control circuitry. In addition, a slew rate enhancement circuit is applied to reduce the voltage undershoot. The proposed LDO is verified in a 65-nm CMOS process with 0.008 mm(2) active area. The measured voltage undershoot is 80 mV with a load steps from 100 mu A to 50 mA with 2-ns edge times, with no external capacitor. And the maximum load capacitance can be extended to 2 nF. A figure-of-merit of 0.8 mV is achieved.
机译:基于翻转电压跟随器的低压降稳压器(LDO)凭借其快速响应和降低的复杂性而引起了人们的关注,而超级源极跟随器可以组合起来,将通过器件栅极的极点推至高频。但是这种拓扑的最大负载电流和最小负载电容是有限的,尤其是当先前设计中省略了SSF的极点和零点时。本文提出了一种解决方案,通过实现一个小型前馈电容器(C-F)和一个阻尼系数控制电路来扩展负载电流和负载电容的范围。另外,采用压摆率增强电路以减小电压下冲。 LDO在具有0.008 mm(2)有效面积的65 nm CMOS工艺中得到了验证。在没有外部电容器的情况下,测得的电压下冲为80 mV,负载步长为100μA至50 mA,边沿时间为2 ns。最大负载电容可以扩展到2 nF。品质因数达到0.8 mV。

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