An 1800 V 300 A nondestructive tester for bipolar power transistors

摘要

A nondestructive reverse-bias safe operating area (RBSOA) tester using an ultra-fast shunt circuit is constructed and demonstrated up to an 1800 V 300 A level. An innovative MOSFET shunt circuit is the key to the high power capability of the tester. The tester is an upgraded version of the old tester (rated at 1000 V 120 A) reported by the authors in 1985. The basic operation of the tester is reviewed, the design and the fabrication of the new tester are described, and test results are provided.