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首页> 外文期刊>IEEE Transactions on Nuclear Science >Radiation characteristics of SIPOS and polysilicon resistors
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Radiation characteristics of SIPOS and polysilicon resistors

机译:SIPOS和多晶硅电阻的辐射特性

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摘要

The radiation characteristics of polysilicon and SIPOS resistors are compared. SIPOS is being considered as a replacement material for polysilicon in feedback resistors in rad-hard ICs. Both materials show little change in resistivity to gamma radiation and are much more neutron-radiation resistant than bulk silicon.
机译:比较了多晶硅电阻和SIPOS电阻的辐射特性。 SIPOS被认为是抗辐射集成电路中反馈电阻器中多晶硅的替代材料。两种材料对伽马辐射的电阻率变化很小,并且比体硅具有更高的耐中子辐射性。

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