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首页> 外文期刊>IEEE Transactions on Nuclear Science >Optimization for SEU/SET Immunity on 0.15 $mu$m Fully Depleted CMOS/SOI Digital Logic Devices
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Optimization for SEU/SET Immunity on 0.15 $mu$m Fully Depleted CMOS/SOI Digital Logic Devices

机译:0.15μm完全耗尽的CMOS / SOI数字逻辑器件的SEU / SET抗扰度优化

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摘要

We designed logic cells hardened for SEUs/SETs using hardness-by-design (HBD) methodology with OKI's 0.15 mum Fully Depleted CMOS/SOI commercial process and these cells were evaluated with sample devices. Our previous work demonstrated that SET-free inverters could be successfully applied as SEU-immune latches. In this work, the logic cells were optimized for SEU/SET immunity up to an LET of 64 MeV/(mg/cm 2), demonstrating that the process was suitable for space applications with a little penalty
机译:我们使用设计硬度(HBD)方法和OKI的0.15 mm完全耗尽CMOS / SOI商业化工艺设计了针对SEU / SET硬化的逻辑单元,并使用示例设备对这些单元进行了评估。我们之前的工作表明,无SET逆变器可以成功用作抗SEU锁存器。在这项工作中,逻辑单元针对SEU / SET抗扰性进行了优化,最大LET达到64 MeV /(mg / cm 2),表明该工艺适用于空间应用,但付出的代价很小。

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