Novel Total Dose and Heavy-Ion Charge Collection Phenomena in a New SiGe HBT on >Thin-Film SOI Technology

摘要

We investigate radiation-induced effects on the DC, AC and thermal characteristics of high-performance SiGe HBTs fabricated on thin-film SOI. TCAD simulations indicate novel heavy-ion charge collection phenomena resulting from the unique ${rm C}_{{rm B}}{rm E}^{{rm B}}{rm C}$ device layout of this technology platform.