Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

摘要

A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM's state is shown to be based upon the resistive path from the p${+}$ -sources in the SRAM to the well. Multiple cell upset patterns for direct charge collection and the well-collapse source-injection mechanisms are predicted and compared to SRAM test data.