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首页> 外文期刊>Nuclear Science, IEEE Transactions on >Dose Rate and Bias Effects on COTS Array CCDs Induce Dark Signals Increase
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Dose Rate and Bias Effects on COTS Array CCDs Induce Dark Signals Increase

机译:剂量率和偏置对COTS阵列CCD的影响导致暗信号增加

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摘要

The experiments of dose rate and bias effects on commercial-off-the-shelf array charge-coupled devices (CCDs) are presented. The dark signal (${V_{rm D}}$) is calculated with the output signal voltages measured at different integration times when no light is incident on the CCDs. The dark signal voltages (${V_{rm D}}$) versus the total dose at the dose rates of 0.01, 0.1, 1.0, 10.0, and 50 rad(Si)/s are compared. Annealing tests are performed to eliminate the time-dependent effects. Degradation levels were found to depend on the dose rates. The CCDs are divided into two groups—with one group biased and the other unbiased during $^{60}{rm Co}gamma $ irradiation. The biased CCDs are shown to degrade more severely than the unbiased CCDs.
机译:提出了剂量率和偏置对现成的商用阵列电荷耦合器件(CCD)的影响的实验。暗信号($ {V_ {rm D}} $)是根据在没有光入射到CCD时在不同积分时间测量的输出信号电压来计算的。比较了暗信号电压($ {V_ {rm D}} $)与总剂量在0.01、0.1、1.0、10.0和50 rad(Si)/ s时的总剂量。进行退火测试以消除时间相关的影响。发现降解水平取决于剂量率。 CCD分为两组-一组在$ ^ {60} {rm Co}γ辐照期间有偏,另一组无偏。偏置的CCD显示出比无偏置的CCD更严重的退化。

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