首页> 外国专利> Proximity sensor having array of geiger mode avalanche photodiodes for estimating distance of an object to the array based on at least one of a dark current and a rate of current spikes generated in dark conditions

Proximity sensor having array of geiger mode avalanche photodiodes for estimating distance of an object to the array based on at least one of a dark current and a rate of current spikes generated in dark conditions

机译:具有盖革模式雪崩光电二极管阵列的接近传感器,用于基于暗电流和在暗状态下产生的电流尖峰的比率中的至少一项来估计物体到阵列的距离

摘要

A proximity sensor may include an array of Geiger mode avalanche photodiodes, each including an anode contact and a cathode contact. A common cathode contact may be coupled to the cathode contacts of the array to define a first connection lead at a back side of the array. A common anode collecting grid contact may be coupled to the anode contacts of the array to define a second connection lead of the array. Circuitry may be coupled with the first and second connection leads and configured to sense at least one of a dark current and a rate of current spikes generated in dark conditions, and generate an output signal representing an estimated distance of an object from the array upon the sensing.
机译:接近传感器可以包括盖革模式雪崩光电二极管的阵列,每个包括阳极触点和阴极触点。公共阴极触点可以耦合到阵列的阴极触点,以在阵列的背面限定第一连接引线。公共阳极收集栅触点可以耦合到阵列的阳极触点,以限定阵列的第二连接引线。电路可以与第一和第二连接引线耦合,并且被配置成感测暗电流和在暗条件下产生的电流尖峰的速率中的至少一个,并且产生表示物体在阵列上与阵列的估计距离的输出信号。感应。

著录项

  • 公开/公告号US9411049B2

    专利类型

  • 公开/公告日2016-08-09

    原文格式PDF

  • 申请/专利权人 STMICROELECTRONICS S.R.L.;

    申请/专利号US201414146175

  • 发明设计人 ALFIO RUSSO;MASSIMO CATALDO MAZZILLO;

    申请日2014-01-02

  • 分类号G06M7;G01J1/44;G01C3/08;G01S17/02;G01S17/08;

  • 国家 US

  • 入库时间 2022-08-21 14:28:50

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