Total Ionizing Dose Effects on Ge Channel FETs with Raised Source/Drain

摘要

The total ionizing dose response of Ge channel FETs with raised source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.