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Lateral MOSFET having a barrier between the source/drain region and the channel region using a heterostructure raised source/drain region
Lateral MOSFET having a barrier between the source/drain region and the channel region using a heterostructure raised source/drain region
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机译:使用异质结构凸起的源极/漏极区域在源极/漏极区域和沟道区域之间具有势垒的横向MOSFET
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摘要
A MOSFET (100) having a heterostructure raised source/drain region and method of making the same. A two layer raised source drain region (106) is located adjacent a gate structure (112). The first layer (106a) is a barrier layer comprising a first material (e.g., SiGe, SiC). The second layer (106b) comprises a second, different material (e.g. Si). The material of the barrier layer (106a) is chosen to provide an energy band barrier between the raised source/drain region (106) and the channel region (108).
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