Total Ionizing Dose (TID) Effects in Ultra-Thin Body Ge-on-Insulator (GOI) Junctionless CMOSFETs With Recessed Source/Drain and Channel

摘要

Total ionizing dose (TID) effects in ultra-thin body Ge on Insulator (GOI) junctionless CMOSFETs with recessed source/drain and channel have been studied. 10-keV X-ray irradiation leads to net hole trapping at the top and bottom Ge/dielectric interfaces of both GOI NFETs and PFETs. The Ge channel thickness and post-oxidation processing can strongly affect the radiation response. Application of negative back-gate bias can moderate the radiation-induced threshold-voltage shifts.