The Impact of Junction Doping Distribution on Device Performance Variability and Reliability for Fully Depleted Silicon on Insulator With Thin Box Layer MOSFETs

摘要

In this study, we investigate the impact of junction doping distribution (LDD/halo) on variations and asymmetry of device characteristics for fully depleted silicon on insulator (FDSOI) with ultrathin buried oxide layer nMOSFET. The device performance and hot carrier induced degradations have also been examined. Junction doping dose of LDD/halo affects the effective channel length, parasitic source/drain resistance, and channel mobility. High junction doping dose enhances the device's performance but degrades device stability and reliability. Compared to high junction doping FDSOI nMOSFET, low junction doping device has lower device variability, better symmetry, and reliability, but suffers lower channel mobility and device driving capability.