An Optimized FinFET Channel With Improved Line-Edge Roughness and Linewidth Roughness Using the Hydrogen Thermal Treatment Technology

摘要

Evolutionary process of a nanoscale FinFET channel during rapid hydrogen thermal treatment is modeled using a kinetic Monte Carlo simulation. In this paper, a novel model of nanoscale FinFET channel is proposed based on the surface diffusion theory of silicon fin structures. The evolution characteristics of fin surface morphology, including line edge roughness (LER), line width roughness, and the cross-correlation coefficient ρ, are investigated in the diffusion process of silicon fin structures at different temperatures and time. All the characteristic parameters can directly affect the carrier transport performance of FinFET. The LER of a silicon fin has been effectively reduced by at least 60%. The linewidth roughness and ρ was also investigated in the evolution of FinFET channel. The results indicate that an optimized nanoscale FinFET channel can be achieved by controlling the migration of surface silicon atoms in rapid hydrogen thermal treatment technology application, yielding atomically smooth sidewall surfaces. The present experimental results are coincided with the simulation results. Thus, such technology plays a crucial role in the application of nanoscale FinFET.