GaAs MESFET physical models for process-oriented design

摘要

A detailed physical model which is used to accurately predict the DC and microwave performance of GaAs MESFETs is described. This model, which accounts for hot electron effects in submicron FETs, includes trapping phenomena and heating due to power dissipation. It is used to determine the optimal design for small-signal and power devices, including single- and double-recessed FETs. The spread in device characteristics can be directly related to the variation in device geometry and process parameters experienced in fabrication. The accuracy and flexibility of this approach are demonstrated by comparison with measured data for a variety of devices.