HIGH FREQUENCY MODELLING METHOD OF GAAS MESFET

摘要

The present invention relates to a high frequency noise modeling method of a gallium arsenide field effect transistor, and can be designed only when noise characteristics are given for each frequency according to the amount of current used for a gate width of a device to be used in a conventional low noise circuit and design. In order to solve the problem, the noise size and output stage equivalent noise conductance of the intrinsic resistance are described as the size of each noise source with four parameters for the drain current change, so that only four parameters can be designed for the GaAs MESFET. You can have the convenience of.