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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >RF and mechanical characterization of flip-chip interconnects in CPW circuits with underfill
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RF and mechanical characterization of flip-chip interconnects in CPW circuits with underfill

机译:带底部填充的CPW电路中倒装芯片互连的RF和机械特性

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RF characterization of flip-chip interconnects in coplanar waveguide (CPW) circuits with underfill is reported. The scattering-parameters have been measured up to 40 GHz for GaAs CPW through-line chips flip-chip mounted on an alumina substrate with and without an underfill epoxy. A lumped-element model of flip-chip interconnect has been developed for flip-chip assemblies with and without epoxy. Fatigue life of flip-chip assemblies has been computed for different chip sizes and substrates. The results show feasibility of using underfill encapsulant in microwave/millimeter-wave frequency range.
机译:报告了带有底部填充的共面波导(CPW)电路中倒装芯片互连的RF特性。对于GaAs CPW直插式芯片倒装芯片安装在带有和不带有底部填充环氧树脂的氧化铝基板上,已经测量了高达40 GHz的散射参数。倒装芯片互连的集总模型已针对带有或不带有环氧树脂的倒装芯片组件开发。已经针对不同的芯片尺寸和基板计算了倒装芯片组件的疲劳寿命。结果表明在微波/毫米波频率范围内使用底部填充胶的可行性。

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