首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Development of Millimeter-Wave Planar Diplexers Based on Complementary Characters of Dual-Mode Substrate Integrated Waveguide Filters With Circular and Elliptic Cavities
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Development of Millimeter-Wave Planar Diplexers Based on Complementary Characters of Dual-Mode Substrate Integrated Waveguide Filters With Circular and Elliptic Cavities

机译:基于具有圆形和椭圆形腔的双模基片集成波导滤波器的互补特性,开发毫米波平面双工器

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摘要

A novel high-performance millimeter-wave planar diplexer is developed based on the complementary characters of substrate integrated waveguide (SIW) dual-mode filters with circular and elliptic cavities by making the tradeoff between the isolation, insertion loss, and selectivity. The responses of the dual-mode SIW circular and elliptic cavities are first investigated. It can be found that the upper side response of the circular cavity and the lower side response of the elliptic cavity are very steep. The diplexers with high isolation performance are then designed based on the complementary response characters of circular and elliptic cavities. A diplexer with two dual-mode SIW circular and elliptic cavities is designed and fabricated with a normal printed circuit board process. The measured insertion losses are 1.95 and 2.09 dB in the upper and lower passbands centered at 26 and 25 GHz with the fractional bandwidths of 5.2% and 5.4%. The isolation is lower than ${-}~{hbox {50 dB}}$.
机译:通过在隔离度,插入损耗和选择性之间进行权衡,基于具有圆形和椭圆形腔体的衬底集成波导(SIW)双模滤波器的互补特性,开发了一种新型的高性能毫米波平面双工器。首先研究了双模SIW圆形和椭圆形腔体的响应。可以发现,圆形腔的上侧响应和椭圆形腔的下侧响应非常陡。然后根据圆形和椭圆形腔的互补响应特性设计具有高隔离性能的双工器。具有两个双模式SIW圆形和椭圆形腔的双工器是通过常规印刷电路板工艺设计和制造的。在以26和25 GHz为中心的上下通带中,测得的插入损耗分别为1.95和2.09 dB,分数带宽为5.2%和5.4%。隔离度低于$ {-}〜{hbox {50 dB}} $。

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